Features

• High Power Handling
• Low Loss / Low Distortion
• Voltage Ratings up to 1000 Volts
• Passivated Chip for Low Leakage Current
• Low Theta (θ) Due to Full Face Chip Bonding
• Leadless Low Inductance MELF Packages
• Various Package Options
• Available as Chips
• Fully RoHS Compliant
• Non-Magnetic Packages Available for MRI

Specifications

Vr - Reverse Voltage (VDC)	200 V
Ct - Total Capacitance - MAX	2.0 pF
Rs - Series Resistance - MAX	1 Ohms
Rp - Parallel Resistance - MIN	50 KOhms
Vf - Forward Voltage - MAX	1.2 V
Tl - Carrier Lifetime - MIN	15 us
Ir - Reverse Current - MAX	1 uA
u - Nominal I-Region Width	300 um
Operating Chip Junction Temperature	-55°C to +175°C
Operating Frequency	100 kHz to 1.5GHz
ESD	Class 1A, HBM
Package Style	Axial Leaded
Pdiss - Power Dissipation (No Heatsink)	2.5W
Pdiss - Power Dissipation (Lead Length 1/4")	10W
Pdiss - Power Dissipation (Single 1 µs pulse)	100 kW
Pdiss - Power Dissipation (Single 100 µs)	5 kW
Packaging	Bag

파츠스트라이크

Features

Specifications

Pin Configuration

Part Numbering System

Part Marking System

Ordering Guide

Block Diagram

관련상품