• Designed for wide RF modulation bandwidths, and low memory effects
• On-chip matching, integrated input DC block, 50-ohm input and ~ 8-ohm output
• Typical GSM/EDGE performance, 940 MHz, 28 V
- Output power = 15 W Avg.
- Linear gain = 31 dB
- Power added effi ciency = 36%
- EVM at 15 W = 1.7 %
- ACPR at 400 kHz = –61 dBc
- ACPR at 600 kHz = –73 dBc
• Typical CW performance at 940 MHz, 28 V
- Output power at P1dB = 32 W
- Linear gain (1 W) = 31 dB
- Power added effi ciency = 46%
• Capable of handling 10:1 VSWR @ 28 V, 30 W (CW) output power
• Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F
• RoHS-compliant package